- 您现在的位置：买卖IC网 > Sheet目录138 > NSVBAT54LT1G (ON Semiconductor)DIODE SCHOTTKY 30V SOT-23-3
BAT54LT1G, NSVBAT54LT1G
http://onsemi.com
4
PACKAGE DIMENSIONS
SOT?23 (TO?236)
CASE 318?08
ISSUE AP
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
SCALE 10:1
mm
inches
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
*For additional information on our Pb?Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
VIEW C
L
0.25
L1
e
E
HE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1
0.01 0.06 0.10 0.001
b
0.37 0.44 0.50 0.015
c
0.09 0.13 0.18 0.003
D
2.80 2.90 3.04 0.110
E
1.20 1.30 1.40 0.047
e
1.78 1.90 2.04 0.070
L
0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
2.10 2.40 2.64 0.083
0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0°
???
10 0°
°
???
10°
ON Semiconductor
and are registered trademarks of Semiconductor Co
mponents Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent?Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800?282?9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81?3?5817?1050
BAT54LT1/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303?675?2175 or 800?344?3860 Toll Free USA/Canada
Fax: 303?675?2176 or 800?344?3867
Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
NSVR0230M2T5G
DIODE SCHOTTKY 200MA 30V SOD723
NSVR0240V2T1G
DIODE SCHOTTKY 40V 250MA SOD523
NSVR0320MW2T1G
DIODE SCHOTTKY 1A 20V SOD-323
NSVRB521S30T1G
DIODE SCHOTTKY 200MA 30V SOD523
NTSB30100S-1G
DIODE LVFR 30A 100V I2PAK
NTST20100CTG
IC DIODE SCHOTTKY 100V TO220-3
NTST30100CTG
IC DIODE SCHOTTKY 100V TO220-3
NTST30U100CTG
IC DIODE SCHOTTKY 100V TO220-3
相关代理商/技术参数
NSVBAT54SWT1G
功能描述:肖特基二极管与整流器 SS SHKY DIO 30V TR RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
NSVBAT54WT1G
功能描述:肖特基二极管与整流器 SS SHKY DIO 30V TR RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
NSVBAV70TT1
制造商:Rochester Electronics LLC 功能描述:- Tape and Reel
NSVBAV70TT1G
功能描述:DIODE SWITCH DUAL 70V SC75-3 RoHS:是 类别:分离式半导体产品 >> 二极管，整流器 - 阵列 系列:- 其它有关文件:STTH10LCD06C View All Specifications 标准包装:1,000 系列:- 电压 - 在 If 时为正向 (Vf)（最大）:2V @ 5A 电流 - 在 Vr 时反向漏电:1µA @ 600V 电流 - 平均整流 (Io)（每个二极管）:5A 电压 - (Vr)（最大）:600V 反向恢复时间(trr):50ns 二极管类型:标准 速度:快速恢复 = 200mA（Io） 二极管配置:1 对共阴极 安装类型:表面贴装 封装/外壳:TO-263-3，D²Pak（2 引线+接片），TO-263AB 供应商设备封装:D2PAK 包装:带卷 (TR) 产品目录页面:1553 (CN2011-ZH PDF) 其它名称:497-10107-2
NSVBAV70TT3G
功能描述:二极管 - 通用，功率，开关 DUAL SWITCHING DIODE RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
NSVBC114YDXV6T1G
功能描述:两极晶体管 - BJT SS RSTR XSTR TR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
NSVBC114YPDXV65G
功能描述:TRANSISTOR BRT DUAL NPN SOT-563 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 阵列﹐预偏压式 系列:- 标准包装:3,000 系列:- 晶体管类型:1 个 NPN，1 个 PNP - 预偏压式（双） 电流 - 集电极 (Ic)（最大）:70mA，100mA 电压 - 集电极发射极击穿（最大）:50V 电阻器 - 基极 (R1)（欧）:47k，2.2k 电阻器 - 发射极 (R2)（欧）:47k 在某 Ic、Vce 时的最小直流电流增益 (hFE):70 @ 5mA，5V Ib、Ic条件下的Vce饱和度（最大）:300mV @ 500µA，10mA 电流 - 集电极截止（最大）:- 频率 - 转换:100MHz，200MHz 功率 - 最大:250mW 安装类型:表面贴装 封装/外壳:6-TSSOP，SC-88，SOT-363 供应商设备封装:PG-SOT363-6 包装:带卷 (TR) 其它名称:SP000784046
NSVBC124EDXV6T1G
制造商:ON Semiconductor 功能描述:SS SOT563 DUAL RSTR XSTR - Tape and Reel